Rjp30e2 datasheet pdf

Rjp30e2 datasheet pdf





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RJP30E2 Datasheet, RJP30E2 PDF, RJP30E2 Data sheet, RJP30E2 manual, RJP30E2 pdf, RJP30E2, datenblatt, Electronics RJP30E2, alldatasheet, free, datasheet, Datasheets, data sheet, datas sheets, databook, free datasheet. rjp30e2 datasheet, rjp30e2 datasheets, rjp30e2 pdf, rjp30e2 price, rjp30e2 buy, rjp30e2 stock. RJP30E2DPP-M0 Renesas Electronics Corporation. Part No. RJP30E2DPP-M0. Description, Silicon N Channel IGBT High Speed Power Switching. File Size, 147.20K / 7 Page. View it Online · Download Datasheet A. Collector peak current ic(peak) Note1. 200. A. Collector dissipation. PC. Note2. 25. W. Junction to case thermal impedance ?j-c. 5. °C/ W. Junction temperature. Tj. 150. °C. Storage temperature. Tstg. –55 to +150. °C. Notes: 1. PW ? 10 ?s, duty cycle ? 1%. 2. Tc = 25°C www.DataSheet.co.kr. Datasheet pdf - www. 12 Apr 2011 Preliminary Datasheet. RJP30E2DPP-M0. Silicon N Channel IGBT. High Speed Power Switching. Features. • Trench gate technology (G5H series). • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. • High speed switching tf = 150 ns typ. • Low leak current ICES = 1 ?A max. • Isolated package RJP30E2 Datasheet pdf, RJP30E2 - [FAC] PDF Datasheet, Equivalent, Schematic, RJP30E2 Datasheets, RJP30E2 Wiki, Transistor, Cross Reference, PDF Download,Free Search Site, Pinout. 26 Jun 2017 Part Number : RJP30E2, RJP30E2DPK-M0. This product has Silicon N Ch 360V IGBT High Speed Power Switching functions. See the preview image and the PDF file for more information. 1 Apr 2010 Notice. 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a RJP30E2 - Find the PDF Datasheet, Specifications, OEM and Distributor Information.

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