Галерея 3083219
Галерея 3083219
National Center for Biotechnology Information
Poly(3-hydroxyvalerate)-(3-hydroxyheptanoate)-(3-hydroxynonanoate)-(3-hydroxyundecanoate) copolymer
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7 Classification Expand this section
Computed by Lexichem TK 2.7.0 (PubChem release 2021.05.07)
Computed by InChI 1.0.6 (PubChem release 2021.05.07)
Computed by InChI 1.0.6 (PubChem release 2021.05.07)
Computed by OEChem 2.3.0 (PubChem release 2021.05.07)
Computed by PubChem 2.1 (PubChem release 2021.05.07)
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poly(3-hydroxyvalerate)-(3-hydroxyheptanoate)-(3-hydroxynonanoate)-(3-hydroxyundecanoate) copolymer
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3-hydroxyheptanoic acid;3-hydroxynonanoic acid;3-hydroxypentanoic acid;3-hydroxyundecanoic acid
Conformer generation is disallowed since too flexible, mixture or salt
3-hydroxyheptanoic acid;3-hydroxynonanoic acid;3-hydroxypentanoic acid;3-hydroxyundecanoic acid
InChI=1S/C11H22O3.C9H18O3.C7H14O3.C5H10O3/c1-2-3-4-5-6-7-8-10(12)9-11(13)14;1-2-3-4-5-6-8(10)7-9(11)12;1-2-3-4-6(8)5-7(9)10;1-2-4(6)3-5(7)8/h10,12H,2-9H2,1H3,(H,13,14);8,10H,2-7H2,1H3,(H,11,12);6,8H,2-5H2,1H3,(H,9,10);4,6H,2-3H2,1H3,(H,7,8)
CCCCCCCCC(CC(=O)O)O.CCCCCCC(CC(=O)O)O.CCCCC(CC(=O)O)O.CCC(CC(=O)O)O
poly(3-hydroxyvalerate)-(3-hydroxyheptanoate)-(3-hydroxynonanoate)-(3-hydroxyundecanoate) copolymer
Computed by PubChem 2.1 (PubChem release 2021.05.07)
Computed by Cactvs 3.4.8.18 (PubChem release 2021.05.07)
Computed by Cactvs 3.4.8.18 (PubChem release 2021.05.07)
Computed by Cactvs 3.4.8.18 (PubChem release 2021.05.07)
Computed by PubChem 2.1 (PubChem release 2021.05.07)
Computed by PubChem 2.1 (PubChem release 2021.05.07)
Computed by Cactvs 3.4.8.18 (PubChem release 2021.05.07)
Computed by Cactvs 3.4.8.18 (PubChem release 2021.05.07)
Computed by PubChem (release 2021.05.07)
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Abstract: We demonstrate ferroelectric (FE) memory transistors on a crystalline silicon channel with endurance exceeding 10
10
cycles. The ferroelectric transistors (FeFETs) incor... View more
We demonstrate ferroelectric (FE) memory transistors on a crystalline silicon channel with endurance exceeding 10
10
cycles. The ferroelectric transistors (FeFETs) incorporate a high-
\kappa
interfacial layer (IL) of thermally grown silicon nitride (SiN
x
) and a thin 4.5 nm layer of Zr-doped FE-HfO
2
(HZO) on a ~30 nm silicon on insulator (SOI) channel. The device shows a ~1V memory window (MW) in a DC sweep of just ± 2.5V, and can be programmed and erased with voltage pulses of
\text {V}_{\text {G}}= \pm \,\,3\text{V}
at a pulse width of 250 ns. The device also shows very good retention behavior. These results indicate that appropriate engineering of the IL layer could substantially improve FeFET device performance and reliability.
Published in: IEEE Electron Device Letters ( Volume: 42 , Issue: 7 , July 2021 )
References is not available for this document.
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One of the major roadblocks for CMOS-compatible doped HfO 2 based [1]–[8] FeFETs is endurance. It has been shown, for FE oxides thicker than 5-6 nm, that bulk charge-trapping and interfacial layer breakdown tend to cause premature device failure [9], [10], with many groups reporting typical endurance metrics of 10 4 -10 6 cycles [11]–[20]. For thinner FE oxides < 5 nm in physical thickness, hot electron-induced hole damage and channel/oxide interface degradation tend to be the key agents limiting device endurance [21], while bulk charge trapping is minimal.
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Poly(3-hydroxyvalerate)-(3-hydroxyheptanoate)-(3-hydroxynonanoate)-(3-hydroxyundecanoate) copolymer | C32H64O12 | CID 3083219 - structure, chemical names, physical ...
24. Mai 2021 Abstract: We demonstrate ferroelectric (FE) memory transistors on a crystalline silicon channel with endurance exceeding 10 10 cycles. The ferroelectric transistors (FeFETs) incorporate a high- $\kappa $ interfacial layer (IL) of thermally grown silicon nitride (SiN x) and a thin 4.5 nm layer of Zr-doped FE-HfO 2 (HZO) on a ~30 nm silicon on insulator (SOI) channel.
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vor 6 Tagen الرياض - 3 - 3 (كونا) -- غادرت طائرتان إغاثيتان متوجهتان من (الرياض) إلى مطار (زوسوف) البولندي القريب من الحدود الأوكرانية تحملان 168 طنا من المساعدات للشعب الأوكراني.
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Poly(3-hydroxyvalerate)-(3-hydroxyheptanoate)-(3-hydroxynonanoate)-(3-hydroxyundecanoate) copolymer | C32H64O12 | CID 3083219 - structure, chemical names, physical ...
24. Mai 2021 Abstract: We demonstrate ferroelectric (FE) memory transistors on a crystalline silicon channel with endurance exceeding 10 10 cycles. The ferroelectric transistors (FeFETs) incorporate a high- $\kappa $ interfacial layer (IL) of thermally grown silicon nitride (SiN x) and a thin 4.5 nm layer of Zr-doped FE-HfO 2 (HZO) on a ~30 nm silicon on insulator (SOI) channel.
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