Галерея 3073942

Галерея 3073942

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Concept and Features of the High-Intensity Ion Implantation and Energy Impact Method
Formation of High-Intensity Ion Beams for High-Intensity Ion Implantation With an Energy Impact on an Irradiated Material
Abstract: This article describes a new method of modifying the properties of materials based on synergistic ion implantation and repetitively pulsed energy impact on the materials’... View more
This article describes a new method of modifying the properties of materials based on synergistic ion implantation and repetitively pulsed energy impact on the materials’ microstructures using high-intensity ion beams with microsubmillisecond durations. High-intensity implantation was carried out at ion beam current densities of several amperes per square centimeter at ion energies of several tens of keV with pulse durations ranging from several tens to several hundred microseconds. These ion beam parameters allowed us to obtain radiation-enhanced diffusion of dopants to depths exceeding the ion beam’s projective range by several orders of magnitude. The high power density and energy density of the ion beam provided fast heating and ultrafast cooling of the near-surface layer due to high-speed heat transfer into the target materials. The results of numerical modeling of the temperature field distribution under the ion beam’s action on the surface with a pulse duration of
50~\mu \text{s}
at an energy density of approximately 10 J/cm
2
are presented. The advantages and disadvantages of ion beam formation with a power density of more than 10
5
W/cm
2
based on plasma immersion ion extraction or in an ion source are analyzed. The possibility of forming a pulsed beam of titanium ions from vacuum arc discharge plasma with a current density of approximately 5 A/cm
2
and a pulse duration of
95~\mu \text{s}
was experimentally confirmed.
Published in: IEEE Transactions on Plasma Science ( Volume: 49 , Issue: 9 , September 2021 )
References is not available for this document.

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In many practical applications of structural materials for various purposes, the near-surface layer is responsible for the performance properties and service life of parts and products. Many methods have been proposed and developed to modify the microstructure and properties of materials by plasma coating deposition [1]–[15], exposure to various types of radiation [16]–[20], high-current electron beams [21]–[27], powerful ion beams [28], [29], and high pulsed power plasma flows [30]–[32]. Each method has its own advantages and disadvantages. The thickness of plasma-deposited coatings by physical vapor deposition (PVD) using vacuum arc discharge and continuous or pulsed magnetron discharge usually does not exceed a few micrometers due to stress and adhesion problems between the coating and substrate. The impact on the material surfaces of energy fluxes with different natures modifies the microstructures and properties of the near-surface layers due to the ultrafast hardening effect. Super-high electromagnetic and corpuscular radiation pulse power provides fast heating, up to the melting point of the near-surface layers, followed by ultrafast cooling due to the timescales of heat transfer into the materials due to the thermal conductivity. The cooling rate can reach 10 8 K/c. The elemental composition of the modified layer remains practically unchanged. The ideal version of ultrafast material hardening is practically achieved. An alternative method of modifying the microstructure and properties of the near-surface layers of various materials is based on introducing dopants into the surface via ion implantation [33]–[42]. The variety of developed and widely used methods is caused by the specific properties of materials and features in the shapes and properties of the surfaces of structural materials for various applications [43], [44]. Changes in the elemental composition provide the possibility of directed modification of the ion-doped layer microstructure. Nonequilibrium phase formation processes play a significant role in ion implantation. The limiting factor on the path of the large-scale practical application of ion implantation methods is small projective ion ranges, usually not exceeding fractions of a micrometer. Using ions with energies of tens and hundreds of keV for implantation, when their projective range in materials reaches several micrometers, is not economically feasible. In this regard, scientific research aimed at finding ways to overcome the problem of small thicknesses of ion-doped layers during ion implantation is extremely relevant. In metals, alloys, and other structural materials, a promising approach, from the point of view of deep ion-doped layer creation, is based on increasing the penetration depth of atoms due to their radiation-enhanced diffusion in a solid body. These methods are called “high-current” [45], [46] and “high-intensity” ion implantation [47]–[49]. A major difference between these implantation methods is heating the implanted surface to a temperature accelerating the diffusion of the implanted dopant. This increases the thickness of the modified layer by an order of magnitude or more. With this implantation, a vital role belongs to processes associated with surface instability and radiation-enhanced diffusion of implantable elements [50] in the presence of thermoelastic [51] and internal stress [52]. High-current density implantation of low-energy nitrogen ions at elevated temperatures significantly improved the tribological properties of various materials [53]–[56]. Published previously results in this research area proved that low-energy, high-current-density nitrogen ion implantation with the ion current density usually not exceeding 5 mA/cm 2 has significant advantages over ion nitriding and high-energy ion implantation [45], [46], [53]–[55], [57]–[60]. Microstructural analyses and tribological evaluations showed that all three processing methods almost identically modify microstructures of different metals, but low-energy ion implantation produces doped layers with higher nitrogen concentrations and deeper diffusion, leading to better surface properties.
IEEE Transactions on Plasma Science
2018 22nd International Conference on Ion Implantation Technology (IIT)
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14. Mai 2021 This article describes a new method of modifying the properties of materials based on synergistic ion implantation and repetitively pulsed energy impact on the materials' microstructures using high-intensity ion beams with microsubmillisecond durations. High-intensity implantation was carried out at ion beam current densities of several amperes per square centimeter at ion energies of ...
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Factoring Calculator gives Factors of 3073942 i.e. 1, 2, 29, 58, 52999, 105998, 1536971, 3073942 numbers that divide 3073942 without a remainder. Find a factor tree of 3073942 easily with this online tool.
14. Mai 2021 This article describes a new method of modifying the properties of materials based on synergistic ion implantation and repetitively pulsed energy impact on the materials' microstructures using high-intensity ion beams with microsubmillisecond durations. High-intensity implantation was carried out at ion beam current densities of several amperes per square centimeter at ion energies of ...
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