Галерея 2178433

Галерея 2178433

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Basic Principles of Temperature Measurements With TSEPs
Literature Review on the Main TSEPs
Abstract: This paper proposes a synthesis of different electrical methods used to estimate the temperature of power semiconductor devices. The following measurement methods are int... View more
This paper proposes a synthesis of different electrical methods used to estimate the temperature of power semiconductor devices. The following measurement methods are introduced: the voltage under low current levels, the threshold voltage, the voltage under high current levels, the gate-emitter voltage, the saturation current, and the switching times. All these methods are then compared in terms of sensitivity, linearity, accuracy, genericity, calibration needs, and possibility of characterizing the thermal impedance or the temperature during the operation of the converter. The measurement of thermo-sensitive parameters of wide bandgap semiconductors is also discussed.
Published in: IEEE Transactions on Power Electronics ( Volume: 27 , Issue: 6 , June 2012 )
Date of Publication: 07 December 2011
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The temperature measurement of a power semiconductor device is of great interest. This important parameter is used in two main ways. The first one is for thermal management of power modules. In this case, the chip temperature is used to get the thermal resistance or thermal impedance of the component that is usually provided by manufacturers in the datasheet. The second use concerns the monitoring of the aging of components for reliability reasons. For this purpose, temperature is monitored and used either directly or indirectly through the thermal resistance or thermal impedance. If the temperature is acquired during the functional operation of the converter, it can be used as a damage indicator of the power module. An increase of this parameter may be due to a rise of a thermal resistance and used as a detector of a solder layer delamination process [1]. The measurement is then used to validate global dimensioning in operating conditions. It can also be done during the lifetime of the converter in order to alert the user before its failure.
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IEEE Transactions on Power Electronics
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